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| Shantou Huashan Electronic Devices Co.,Ltd. HFP640 N-Channel Enhancement Mode Field Effect Transistor General Description These power MOSFETs is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. And DC-DC&DC-AC Converters for Telecom,Industrial and Consumer Environment TO-220 Features 18A,200V,RDS(on) <0.18@VGS =10 V * Fast switching * 100% avalanche tested * Improved dv/dt capability * Equivalent Type:IRF640 * 1- G 2-D 3-S Maximum RatingsTa=25 unless otherwise specified T stg ----Storage Temperature ------------------------------------------------------ -55~150 T j ----Operating Junction Temperature -------------------------------------------------- 150 V DSS ---- Drain-Source Voltage ---------------------------------------------------------- 200V VDGR ---- Drain-Gate Voltage (RGS=20k) ------------------------------------------------------------ 200V VGSS ---- Gate-Source Voltage -----------------------------------------------------------------------ID ---- Drain Current (Continuous) ------------------------------------------------------------------- 20V 18A PD ---- Maximum Power Dissipation ------------------------------------------------------------- 125W IAR ---- Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, d < 1%) ------------------------------------------------------ 18A EAS---- Single Pulse Avalanche Energy (starting Tj = 25, ID = IAR, VDD = 50 V) --------------------------------------------------- 320mJ EAR---- Repetitive Avalanche Energy(pulse width limited by Tj max, d < 1%) ---------------- 13.4mJ Thermal Characteristics Symbol Rthj-case Rthj-amb Rth c-s Items Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink TO-220 Max 1.0 Max 62.5 Typ 0.5 Unit /W /W /W Shantou Huashan Electronic Devices Co.,Ltd. HFP640 Electrical CharacteristicsTa=25 unless otherwise specified Symbol Off Characteristics BVDSS IDSS IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate - Body Leakage 2.0 4.3 1700 230 60 50 300 300 230 45 6.5 22 18 72 1.5 58 200 25 250 V A A nA V ID=250A ,VGS=0V VDS =200V, VGS=0V VDS =160V, VGS=0V,Tj=125 VGS= 20V , VDS =0V VDS = VGS , ID=250A VGS=10V, ID=9A VDS=40V, ID=9A (Note 1) Items Min. Typ. Max. Unit Conditions 100 4.0 0.18 On Characteristics Gate Threshold Voltage VGS(th) RDS(on) gFS Ciss Coss Crss Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn - On Delay Time Rise Time Turn - Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge S pF pF pF nS nS nS nS nC nC nC A A V Dynamic Characteristics and Switching Characteristics VDS = 25 V, VGS = 0 V, f = 1.0 MHz td(on) tr td(off) tf Qg Qgs Qgd VDD = 100 V, ID = 18Apk RG= 25 (Note 1,2) VDS=0.8VDSS, ID=18A, VGS = 10 V (Note 1,2) Drain-Source Diode Characteristics and Maximun Ratings Continuous Source-Drain Diode IS Forward Current Pulsed Drain-Source Diode ISM Forward Current Source-Drain Diode Forward VSD On-Voltage Notes: 1. Pulse Test: Pulse width300S,Duty cycle2% 2. Essentially independent of operating temperature IS=18A,VGS=0 Shantou Huashan Electronic Devices Co.,Ltd. Typical Characteristics HFP640 Shantou Huashan Electronic Devices Co.,Ltd. HFP640 Typical Characteristics Figure 9. Maxinum Safe operating Area Figure 11. Transient Thermal Response Cueve Shantou Huashan Electronic Devices Co.,Ltd. Typical Characteristics HFP640 Shantou Huashan Electronic Devices Co.,Ltd. Typical Characteristics HFP640 |
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